(China (Mainland))
Product Summary
The IRF9530NPBF is a Power MOSFET. The IRF9530NPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF9530NPBF absolute maximum ratings: (1)Pulsed Drain Current: -56A; (2)Power Dissipation: 3.8 W; (3)Power Dissipation: 79 W; (4)Linear Derating Factor: 0.53 W/°C; (5)Gate-to-Source Voltage: ± 20 V; (6)Single Pulse Avalanche Energy: 250 mJ; (7)Avalanche Current: -8.4 A; (8)Repetitive Avalanche Energy: 7.9 mJ; (9)Peak Diode Recovery dv/dt: -5.0 V/ns; (10)Operating Junction and Storage Temperature Range:-55 to 175°C.
Features
IRF9530NPBF features: (1)Advanced Process Technology; (2)Surface Mount; (3)175°C Operating Temperature; (4)Fast Switching; (5)P-Channel; (6)Fully Avalanche Rated.
Diagrams
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 IRF9530NPBF |
International Rectifier |
MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC |
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