(China (Mainland))
Product Summary
The M5M418125AJ-6 is a 4-bit dynamic RAM, fabricated with the high performance CMOS process, and the M5M418125AJ-6 is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metal process combined with twin-well CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities.
Parametrics
M5M418125AJ-6 absolute maximum ratings: (1)VCC Supply voltage With respect to VSS: -1 ~ 7 V; (2)VI Input voltage: -1 ~ 7 V; (3)VO Output voltage: -1 ~ 7 V; (4)IO Output current : 50 mA; (5)Pd Power dissipation Ta = 25℃: 1000 mW; (6)Topr Operating temperature: 0 ~ 70 ℃; (7)Tstg Storage temperature: -65 ~ 150 ℃.
Features
M5M418125AJ-6 features: (1)Standard 26 pin SOJ, 26 pin TSOP; (2)Single 5V ± 10% supply; (3)Low stand-by power dissipation 5.5mW(Max): CMOS Input level, 2.2mW (Max)* : CMOS Input level; (4)Low operating power dissipation; (5)Self refresh capability self refresh current : 200.0 m A(Max); (6)Fast-page mode, Read-modify-write, RAS-only refresh; (7)CAS before RAS refresh, Hidden refresh capabilities Early-write mode and OE to control output buffer impedance; (8)All inputs, output TTL compatible and low capacitance; (9)2048 refresh cycles every 32ms (A0 ~ A10)Applicable to self refresh version (M5M417400CJ,TP-5S,-6S, -7S : option)only.
Diagrams
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 M5M417400CJ |
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M5M417400CTP |
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M5M44260CJ |
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M5M44260CTP |
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M5M44265CJ |
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Negotiable |
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M5M44405CJ |
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Negotiable |
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