IRFP448PBF

third generation power MOSFET, 500 V, 6.6 A, 180 W, TO-247

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PartNumber:: IRFP448PBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 06+

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Products Upload time: 2012-11-23

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Product Summary

The IRFP448PBF is a third generation power MOSFET. The IRFP448PBF from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. The IRFP448PBF also provides greater creepage distance between pins to meet the requirements of most safety specifications.

Parametrics

IRFP448PBF absolute maximum ratings: (1)Drain-Source Voltage VDS: 500 V; (2)Gate-Source Voltage VGS : ± 20V; (3)Continuous Drain Current VGS at 10 V TC = 25 ℃ ID 11 TC = 100 ℃: 6.6 A; (4)Pulsed Drain Currenta IDM: 44A; (5)Linear Derating Factor: 1.4 W/℃; (6)Single Pulse Avalanche Energyb EAS: 550 mJ; (7)Repetitive Avalanche Currenta IAR: 11 A; (8)Repetitive Avalanche Energya EAR: 18 mJ; (9)Maximum Power Dissipation TC = 25 ℃ PD: 180 W; (10)Peak Diode Recovery dV/dtc dV/dt: 3.5 V/ns; (11)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to + 150 ℃; (12)Soldering Recommendations (Peak Temperature)for 10 s: 300℃.

Features

IRFP448PBF features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)Isolated Central Mounting Hole; (4)Fast Switching; (5)Ease of Paralleling; (6)Simple Drive Requirements; (7)Lead (Pb)-free Available.