(China (Mainland))
Product Summary
The FDC642P is a P-Channel 2.5V specified MOSFET. The FDC642P is produced using Fairchilds advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.
Parametrics
FDC642P absolute maximum ratings: (1)VDSS Drain-Source Voltage: -20 V; (2)VGSS Gate-Source Voltage: ±8 V; (3)ID Drain Current - Continuous: -4 A, Drain Current - Pulsed: -20A; (4)PD Power Dissipation for Single Operation: 1.6W; (5)TJ, Tstg Operating and Storage Junction Temperature Range: -55 to +150℃.
Features
FDC642P features: (1)Fast switching speed; (2)Low gate charge (7.2nC typical); (3)High performance trench technology for extremely low RDS(0N); (4)SuperSOT-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Diagrams
| Image | Part No | Mfg | Description |  |
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 FDC642P |
Fairchild Semiconductor |
MOSFET SSOT-6 P-CH -20V |
Data Sheet |
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FDC642P_F085 |
Fairchild Semiconductor |
MOSFET P-CHANNEL 2.5V PowerTrench MOS |
Data Sheet |
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