(China (Mainland))
Product Summary
The E13009L is an NPN silicon transistor.
Parametrics
E13009L absolute maximum ratings: (1)VCB Collector-Base Voltage: 700 V; (2)V CE Collector-Emitter Voltage: 400 V; (3)VEBO Emitter-Base Voltage: 9 V; (4)IC Collector Current (DC): 12 A; (5)ICP Collector Current (Pulse): 24 A; (6)IB Base Current: 6 A; (7)PC Collector Dissipation (TC=25℃): 130 W; (8)TJ Junction Temperature: 150 ℃; (9)TSTG Storage Temperature: - 65 ~ 150 ℃.
Features
E13009L features: (1)High Speed Switching; (2)Suitable for Switching Regulator and Motor Control.
Diagrams
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E13005A |
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